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Study of Electronic States in LaNiO ₃ /SrRuO ₃ Bilayers: Interface‐Induced Magnetism and Charge Transfer

https://doi.org/10.1002/pssb.202000527

Tanguturi, Ranganadha Gopalarao; Zhou, Peng; Yan, Zhuo; Qi, Yajun; Xia, Zhengcai; Liu, Yong; Xiong, Rui; Guo, Yizhong; Wang, Lihua; Srinivasan, Gopalan; et al (August 2021, physica status solidi (b))

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Evidence for strain control of magnetic anisotropy in epitaxial nickel ferrite thin films grown on strontium titanate substrates

https://doi.org/10.1016/j.materresbull.2021.111214

Liu, Ying; Mei, Zhiheng; Guo, Yizhong; Zhou, Peng; Qi, Yajun; Liang, Kun; Ma, Zhijun; Xia, Zhengcai; Adhikary, Amitava; Dong, Cunzheng; et al (June 2021, Materials Research Bulletin)
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A Room‐Temperature Ferroelectric Resonant Tunneling Diode

https://doi.org/10.1002/adma.202205359

Ma, Zhijun; Zhang, Qi; Tao, Lingling; Wang, Yihao; Sando, Daniel; Zhou, Jinling; Guo, Yizhong; Lord, Michael; Zhou, Peng; Ruan, Yongqi; et al (August 2022, Advanced Materials)

Abstract Resonant tunneling is a quantum‐mechanical effect in which electron transport is controlled by the discrete energy levels within a quantum‐well (QW) structure. A ferroelectric resonant tunneling diode (RTD) exploits the switchable electric polarization state of the QW barrier to tune the device resistance. Here, the discovery of robust room‐temperature ferroelectric‐modulated resonant tunneling and negative differential resistance (NDR) behaviors in all‐perovskite‐oxide BaTiO₃/SrRuO₃/BaTiO₃QW structures is reported. The resonant current amplitude and voltage are tunable by the switchable polarization of the BaTiO₃ferroelectric with the NDR ratio modulated by ≈3 orders of magnitude and an OFF/ON resistance ratio exceeding a factor of 2 × 10⁴. The observed NDR effect is explained an energy bandgap between Ru‐t_2gand Ru‐e_gorbitals driven by electron–electron correlations, as follows from density functional theory calculations. This study paves the way for ferroelectric‐based quantum‐tunneling devices in future oxide electronics.
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